型号:

IRFD320PBF

RoHS:无铅 / 符合
制造商:Vishay Siliconix描述:MOSFET N-CH 400V 490MA 4-DIP
详细参数
数值
产品分类 分离式半导体产品 >> FET - 单
IRFD320PBF PDF
产品目录绘图 IR(F,L)D Series Top
IR(F,L)D Series Side 1
IR(F,L)D Series Side 2
标准包装 2,500
系列 -
FET 型 MOSFET N 通道,金属氧化物
FET 特点 标准
漏极至源极电压(Vdss) 400V
电流 - 连续漏极(Id) @ 25° C 490mA
开态Rds(最大)@ Id, Vgs @ 25° C 1.8 欧姆 @ 210mA,10V
Id 时的 Vgs(th)(最大) 4V @ 250µA
闸电荷(Qg) @ Vgs 20nC @ 10V
输入电容 (Ciss) @ Vds 410pF @ 25V
功率 - 最大 1W
安装类型 通孔
封装/外壳 4-DIP(0.300",7.62mm)
供应商设备封装 4-DIP,Hexdip,HVMDIP
包装 管件
其它名称 *IRFD320PBF
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